2003. 3. 26 1/2 semiconductor technical data PG12GCS23 tvs diode array for esd protection in portable electronics revision no : 0 protection in portable electronics applications.features h 350 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 15a(tp=8/20 s) h standard sot-23 package. h protects one bidirectional line or two unidirectional lines. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h industrial controls. h personal digital assistants (pda s) h notebooks, desktops pc, & servers. h portable instrumentation. h set-top box, dvd player. maximum rating (ta=25 ? ) dim millimeters sot-23 a bc d e 2.93 0.20 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. anode 12. anode 2 3. cathode electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 350 w peak pulse current (tp=8/20 s) i pp 15 a operating temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 12 v reverse breakdown voltage v br i t =1ma 13.3 - - v reverse leakage current i r v rwm =12v - - 0.1 a clamping voltage v c i pp =15a, tp=8/20 s - - 25 v junction capacitance c j v r =0v, f=1mhz pin 3 to 1 and pin 3 to 2 - - 120 pf downloaded from: http:///
2003. 3. 26 2/2 PG12GCS23 revision no : 0 downloaded from: http:///
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